A Fin Field-effect transistor (FinFET) is a MOSFET built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, forming a double gate structure. These devices have been given the generic name “finfets” because the source/drain region forms fins on the silicon surface. The FinFET devices have significantly faster switching times and higher current density than the mainstream CMOS technology.
