[29] “Preparation method of high sensitivity LaF3 thin film, the high sensitivity LaF3 thin film prepared thereby and sensor comprising the same”, 10-2018-0139254, domestic application, 2018.11.13.

*[28] “Vertical nanowire thermoelectric device including silicide layer and a method for manufacturing the same”, 16/186,844(USA), international application, 2018.11.12.

*[27] “Thermoelectric device comprising vertical nanowire array with scallop structure and fabrication method thereof”, 10-2018-0131668, domestic application, 2018.10.31.

*[26] “Vertical nanowire thermoelectric device including silicide layer and a method for manufacturing the same”, 10-2017-0153007, domestic application, 2017.11.16.

[25] “Thyristor-based Memory and Method of fabricating the same”, 10-2017-0093974, domestic application, 2017.07.25.

*[24] “Nanowire Field-Effect Sensor including nanowires having network structure and fabrication method”, 9,638,659(USA), international registration, 2017.05.02.

*[23] “Solar Cell and Method for Manufacturing Same”, ZL 201280049982.2(China), international registration, 2017.03.01.

*[22] “Solar cell and Method of fabricating the same”, 9,559,230(USA), international registration, 2017.01.31.

[21] “Selective Cell Counter and Method for Selective Cell Counting”, 10-1698508, domestic registration, 2017.01.16.

*[20] “Vertical nanowire tunneling field-effect transistor and method for fabricating the same”, 10-2016-0177655, domestic application, 2016.12.23.

*[19] “Nanowire Field-Effect Sensors having a 3-Dimensional Stacked Nanowire”, 9,461,157(USA), international registration, 2016.10.04.

*[18] “Asymmetric vertical nanowire photodetector and method for fabricating the same”, 10-2016-0125995, domestic application, 2016.09.30.

[17] “Nanowire Sensor having a Network Nanowire and the manufacturing method”, ZL201280018389.1(China), international registration, 2016.01.06.

*[16] “Solar Cell and Method for Manufacturing Same”, 5820075(Japan), international registration, 2015.10.09.

*[15] “Thermoelectric device using asymmetric vertical nanowire array and a method for manufacturing the same”, 10-2015-0127219, domestic application, 2015.09.08.

*[14] “Nanowire Field-Effect Transisitor and Method for Manufacturing Same”, 9,123,695(USA), international registration, 2015.09.01.

[13] “Nanowire Sensor having a Network Nanowire and the manufacturing method”, 9,099,543(USA), international registration, 2015.08.04.

[12] “Electronic device”, 14/751,290 (USA), international application, 2015.06.26.

[11] “Nanowire Field-Effect Sensors having a 3-Dimensional Stacked Nanowire”, 10-1444260, domestic registration, 2014.09.18.

[10] “Electronic device”, 10-2014-0080076, domestic application, 2014.06.27.

*[9] “Solar cell and Method of fabricating the same”, 12825711(EP), international application, 2014.03.18.

 

(Before POSTECH professor appointment)

 

[8] “Nanowire Field-Effect Sensors having a 3-Dimensional Stacked Nanowire”, PCT/KR2013/010655(PCT), international application, 2013.11.22.

*[7] “Solar cell and Method of fabricating the same”, 10-1316375, domestic registration, 2013.10.01.

[6] “Nanowire field effect transistor and method for fabricating the same”, 10-1271787, domestic registration, 2013.05.30.

[5] “Nanowire Sensor having a Network Nanowire and the manufacturing method”, 10-1263188, domestic registration, 2013.05.06.

*[4] “Nanowire field effect transistor and method for fabricating the same”, PCT/KR2013/001939(PCT), international application, 2013.03.11.

[3] “Solar cell and Method of fabricating the same”, PCT/KR2012/006563(PCT), international application, 2012.08.17.

[2] “Nanowire Sensor having a Network Nanowire and the manufacturing method”, PCT/KR2012/001964(PCT), international application, 2012.03.19.

[1] “Asymmetrical channel structure nanowire field-effect transistor with different source and drain doping”, 10-2012-0025726, domestic application, 2012.03.13.