A Fin Field-effect transistor (FinFET) is a MOSFET built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, forming a double gate structure. These devices have been given the generic name “finfets” because the source/drain region forms fins on the silicon surface. The FinFET devices have significantly faster switching times and higher current density than the mainstream CMOS technology.
Dynamic random-access memory (DRAM) is a type of random access semiconductor memory that stores each bit of data in a separate tiny capacitor within an integrated circuit. The capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors slowly leaks off, so without intervention the data on the chip would soon be lost. To prevent this, DRAM requires an external memory refresh circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM) which does not require data to be refreshed. Unlike flash memory, DRAM is volatile memory (vs. non-volatile memory), since it loses its data quickly when power is removed. However, DRAM does exhibit limited data remanence.
