[51] “Thermoelectric device comprising nanotube array and method of manufacturing thereof”, 10-2024-0088226, domestic application, 2024.07.04.

[50] “Capacitor-less memory device and operation method thereof”, 10-2671670, domestic registration, 2024.05.29.

[49] “Memory device including double PN junctions and driving method thereof, and Capacitor-less Memory device including double PN junctions and control gates and operation method thereof”, I838634(Taiwan), international registration, 2024.04.11.

[48] “Integrated circuit device”, 18/609,539(USA), international application, 2024.03.19.

[47] “Substrate for surface acoustic wave device and surface acoustic wave device comprising the same”, 10-2617108, domestic registration, 2023.12.19.

[46] “Integrate-and-Fire Neuron Circuit and operation method thereof”, 18/544,268(USA), international application, 2023.12.18.

[45] “Memory device including double PN junctions and driving method thereof, and Capacitor-less Memory device including double PN junctions and control gates and operation method thereof”, 11,664,382(USA), international registration, 2023.05.30.

[44] “Substrate for surface acoustic wave device and surface acoustic wave device comprising the same”, 18/254,131(USA), international application, 2023.05.23.

[43] “Integrated circuit device”, 10-2023-0054972, domestic application, 2023.04.26.

[42] “Integrate-and-Fire Neuron Circuit and operation method thereof”, 10-2023-0027658, domestic application, 2023.03.02.

[41] “Bicycle robot capable of controlling steering and balance and control method thereof”, 10-2315255, domestic registration, 2021.10.14.

[40] “Drain-extended FinFET with a High-k Dielectric Field Plate and Method of fabricating the same”, 10-2300071, domestic registration, 2021.09.02.

[39] “Memory device including double PN junctions and driving method thereof, and Capacitor-less Memory device including double PN junctions and control gates and operation method thereof”, 202110829499.7(Taiwan), international application, 2021.07.26.

[38] “Memory device including double PN junctions and driving method thereof, and Capacitor-less Memory device including double PN junctions and control gates and operation method thereof”, 202110829499.7(China), international application, 2021.07.22.

[37] “Capacitor-less Memory device including double PN junctions and control gates and operation method thereof”, 10-2021-0070651, domestic application, 2021.06.01.

[36] “Memory device including double PN junctions and driving method thereof”, 1022262060000, domestic registration, 2021.03.04.

[35] “Thermoelectric device comprising vertical nanowire array with scallop structure and fabrication method thereof”, 10-2151310, domestic registration, 2020.08.27.

[34] “Memory device comprising Schottky junction and operation method for the same”, 10-2020-0048140, domestic application, 2020.04.21.

[33] “Vertical nanowire thermoelectric device including silicide layer and a method for manufacturing the same”, 10-2100385, domestic registration, 2020.04.07.

[32] “Nanowire Thermoelectric device having a 3-Dimensional Stacked Nanowire and Method of Manufacturing the same”, 10-2019-0099808, domestic application, 2019.08.14.

[31] “Preparation method of high sensitivity LaF3 thin film, the high sensitivity LaF3 thin film prepared thereby and sensor comprising the same”, 10-2000882, domestic registration, 2019.07.10.

[30] “Vertical nanowire-based photodetector having double absorption layer and manufacturing method thereof”, 10-2019-0081110, domestic application, 2019.07.05.

[29] “Thermoelectric device using asymmetric vertical nanowire array and a method for manufacturing the same”, 10-1995614, domestic application, 2019.06.26.

[28] “Thyristor-based Memory and Method of fabricating the same”, 10-1952510, domestic registration, 2019.02.20.

[27] “Vertical Nano-structured Photodetector and Method of Forming the same”, 10-1936466, domestic registration, 2019.01.02.

[26] “Photodetector comprising polysilicon layer having enhanced responsivity and preparation method thereof”, 10-2018-0140535, domestic application, 2018.11.15.

[25] “Vertical nanowire thermoelectric device including silicide layer and a method for manufacturing the same”, 16/186,844(USA), International registration, 2018.11.12.

*[24] “Nanowire Field-Effect Sensor including nanowires having network structure and fabrication method”, 9,638,659(USA), international registration, 2017.05.02.

*[23] “Solar Cell and Method for Manufacturing Same”, ZL 201280049982.2(China), international registration, 2017.03.01.

*[22] “Solar cell and Method of fabricating the same”, 9,559,230(USA), international registration, 2017.01.31.

[21] “Selective Cell Counter and Method for Selective Cell Counting”, 10-1698508, domestic registration, 2017.01.16.

*[20] “Vertical nanowire tunneling field-effect transistor and method for fabricating the same”, 10-2016-0177655, domestic application, 2016.12.23.

*[19] “Nanowire Field-Effect Sensors having a 3-Dimensional Stacked Nanowire”, 9,461,157(USA), international registration, 2016.10.04.

*[18] “Asymmetric vertical nanowire photodetector and method for fabricating the same”, 10-2016-0125995, domestic application, 2016.09.30.

[17] “Nanowire Sensor having a Network Nanowire and the manufacturing method”, ZL201280018389.1(China), international registration, 2016.01.06.

*[16] “Solar Cell and Method for Manufacturing Same”, 5820075(Japan), international registration, 2015.10.09.

*[15] “Thermoelectric device using asymmetric vertical nanowire array and a method for manufacturing the same”, 10-2015-0127219, domestic application, 2015.09.08.

*[14] “Nanowire Field-Effect Transisitor and Method for Manufacturing Same”, 9,123,695(USA), international registration, 2015.09.01.

[13] “Nanowire Sensor having a Network Nanowire and the manufacturing method”, 9,099,543(USA), international registration, 2015.08.04.

[12] “Electronic device”, 14/751,290 (USA), international application, 2015.06.26.

[11] “Nanowire Field-Effect Sensors having a 3-Dimensional Stacked Nanowire”, 10-1444260, domestic registration, 2014.09.18.

[10] “Electronic device”, 10-2014-0080076, domestic application, 2014.06.27.

*[9] “Solar cell and Method of fabricating the same”, 12825711(EP), international application, 2014.03.18.

(Before POSTECH professor appointment)

[8] “Nanowire Field-Effect Sensors having a 3-Dimensional Stacked Nanowire”, PCT/KR2013/010655(PCT), international application, 2013.11.22.

*[7] “Solar cell and Method of fabricating the same”, 10-1316375, domestic registration, 2013.10.01.

[6] “Nanowire field effect transistor and method for fabricating the same”, 10-1271787, domestic registration, 2013.05.30.

[5] “Nanowire Sensor having a Network Nanowire and the manufacturing method”, 10-1263188, domestic registration, 2013.05.06.

*[4] “Nanowire field effect transistor and method for fabricating the same”, PCT/KR2013/001939(PCT), international application, 2013.03.11.

[3] “Solar cell and Method of fabricating the same”, PCT/KR2012/006563(PCT), international application, 2012.08.17.

[2] “Nanowire Sensor having a Network Nanowire and the manufacturing method”, PCT/KR2012/001964(PCT), international application, 2012.03.19.

[1] “Asymmetrical channel structure nanowire field-effect transistor with different source and drain doping”, 10-2012-0025726, domestic application, 2012.03.13.